Zirconia CMP Slurry
CAS Numarası: 1314-23-4
Nano zirconia-based CMP (chemical mechanical planarization) slurry for semiconductor wafer polishing. Median abrasive particle size d50 <80 nm with tight PSD control. Delivers excellent material removal rate (MRR) with low defectivity for STI (shallow trench isolation) and ILD (interlayer dielectric) polishing steps.
Teknik Özellikler
| abrasive | Nano ZrO₂ |
| pH range | 2 – 11 (formulation dependent) |
| appearance | White to off-white suspension |
| solids content | 5 – 30 wt% (adjustable) |
| median particle size | d50 < 80 nm |
| coarse particle count | ≤100 pcs/mL (>0.5 μm, LPC) |
Uygulama Alanları
- Semiconductor STI (shallow trench isolation) polishing
- ILD (interlayer dielectric) CMP
- Optical glass and lens polishing
- Sapphire substrate planarization
- Advanced ceramic finishing
Ürün Özellikleri
- Sub-80 nm abrasive for scratch-free polishing at advanced nodes
- High MRR with excellent within-wafer uniformity
- Extremely low coarse particle count — minimizes micro-scratches
- pH and solids content tunable to process requirements
- Long shelf life with anti-settling stabilization